Physical design to verify theoretical 0.1 PPM/[degrees]C stability in a bandgap type circuit
The propose of this paper is the experimental validation of a temperature coefficient less than 0.2 ppm/°C, theoretically obtained in a low-voltage bandgap references type circuit, using a design method based on the linear sum of two base-emitter voltages. The experiment consists of obtaining VREF(T) from experimental measurements of base-emitter voltage in a 20 to to 100 °C interval. The measurements of VBE(T) were performed on MAT01 industrial bipolar transistors.
- Energía y Computación 
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