Physical Design to Verify Theoretical 0.1 PPM/°C Stability in a Bandgap Type Circuit
| dc.contributor.author | Polanco, Alicia | spa |
| dc.contributor.author | Nagy, Agnes | spa |
| dc.contributor.author | Alvarez, Manel | spa |
| dc.date.accessioned | 2011-10-13T18:24:13Z | |
| dc.date.available | 2011-10-13T18:24:13Z | |
| dc.date.issued | 2011-10-13 | |
| dc.description.abstract | The propose of this paper is the experimental validation of a temperature coefficient less than 0.2 ppm/°C, theoretically obtained in a low-voltage bandgap references type circuit, using a design method based on the linear sum of two base-emitter voltages. The experiment consists of obtaining VREF(T) from experimental measurements of base-emitter voltage in a 20 to to 100 °C interval. The measurements of VBE(T) were performed on MAT01 industrial bipolar transistors. | spa |
| dc.identifier.uri | https://hdl.handle.net/10893/1436 | |
| dc.language.iso | en | spa |
| dc.rights.accessrights | info:eu-repo/semantics/openAccess | spa |
| dc.subject | Physical design | spa |
| dc.subject | Temperature coefficient | spa |
| dc.subject | Bandgap voltage references | spa |
| dc.title | Physical Design to Verify Theoretical 0.1 PPM/°C Stability in a Bandgap Type Circuit | spa |
| dc.type | Artículo de revista | spa |
| dspace.entity.type | Publication |